Datasheet4U Logo Datasheet4U.com

MTE300P10KN3 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • Low gate charge.
  • Compact and low profile SOT-23 package.
  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • ESD Protected Gate.
  • Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-1A -100V -1.2A 378mΩ(typ) Symbol MTE300P10KN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTE300P10KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free.

📥 Download Datasheet

Datasheet preview – MTE300P10KN3

Datasheet Details

Part number MTE300P10KN3
Manufacturer CYStech Electronics
File Size 417.85 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE300P10KN3 Datasheet
Additional preview pages of the MTE300P10KN3 datasheet.

📁 Similar Datasheet

  • MTE30N50E - TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM (Motorola)
  • MTE3134K - N-Channel 20V Fast Switching MOSFET (Meitai Microelectronics)
  • MTE333CA - 5mm Infrared Emitter (Marktech Corporate)
  • MTE010N10E3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTE010N10F3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTE010N10FP - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTE011N10RE3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTE011N10RFP - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTE011N10RH8 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTE011N10RJ3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
Other Datasheets by CYStech Electronics

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 1/9 -100V P-Channel Enhancement Mode MOSFET MTE300P10KN3 Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD Protected Gate • Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-1A -100V -1.
Published: |