MTE300P10KN3

The MTE300P10KN3 is P-Channel Enhancement Mode Power MOSFET designed by CYStech Electronics.

Product Overview

CYStech Electronics

Part number	MTE300P10KN3
Manufacturer	CYStech Electronics
File Size	417.85 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTE300P10KN3-CYStechElectronics.pdf
Additional preview pages of the MTE300P10KN3 datasheet.

Low gate charge.
Compact and low profile SOT-23 package.
Advanced trench process technology.
High density cell design for ultra low on resistance.
ESD Protected Gate.
Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-1A -100V -1.2A 378mΩ(typ) Symbol MTE300P10KN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTE300P10KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free.

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Published: Oct 26, 2016 |