MTE300P10KN3 Overview
CYStech Electronics Corp. 2015.09.07 Revised Date : 1/9 -100V P-Channel Enhancement Mode MOSFET MTE300P10KN3.
MTE300P10KN3 Key Features
- Low gate charge
- pact and low profile SOT-23 package
- Advanced trench process technology
- High density cell design for ultra low on resistance
- ESD Protected Gate
- Pb-free lead plating package
- 100V -1.2A