* Low gate charge
* Compact and low profile SOT-23 package
* Advanced trench process technology
* High density cell design for ultra low on resistance
* ESD Protected Gate
* Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=
MTE300P10KN3 Datasheet (417.85 KB)
MTE300P10KN3
CYStech Electronics
417.85 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 1/9 -100V P-Channel Enhancement Mode MOSFET MTE300P1.
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