MTP1406L3 - P-Channel Enhancement Mode Power MOSFET

CYStech Electronics

Datasheet Details

Part number	MTP1406L3
Manufacturer	CYStech Electronics
File Size	329.26 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTP1406L3-CYStechElectronics.pdf

Simple Drive Requirement.
Low On-resistance.
Fast switching Characteristic.
Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A RDSON@VGS=-4.5V, ID=-2A -60V -4.8A 75mΩ (typ. ) 74mΩ (typ. ) 99mΩ (typ. ) Symbol MTP1406L3 Outline SOT-223 D S G：Gate D：Drain S：Source D G Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain C.

📁 MTP1406L3 Similar Datasheet

MTP10-B7F55 - Thermopile Sensor (MemsFrontier)
MTP10N05 - (MTP10N05 / MTP10N06) N-Channel Power MOSFETs (Motorola)
MTP10N06 - (MTP10N05 / MTP10N06) N-Channel Power MOSFETs (Motorola)
MTP10N08 - (MTP10N08 / MTP10N10) N-Channel Power MOSFETs (Fairchild Semiconductor)
MTP10N10 - (MTP10N08 / MTP10N10) N-Channel Power MOSFETs (Fairchild Semiconductor)
MTP10N10E - TMOS POWER FETs (Motorola)
MTP10N10EL - TMOS POWER FET (Motorola)
MTP10N10M - Power Field Effect Transistor (Motorola Semiconductor)

Other Datasheets by CYStech Electronics

Published: May 25, 2014 |