MTP1406L3 - P-Channel Enhancement Mode Power MOSFET
CYStech Electronics
Key Features
Simple Drive Requirement.
Low On-resistance.
Fast switching Characteristic.
Pb-free lead plating package
BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A RDSON@VGS=-4.5V, ID=-2A
-60V -4.8A 75mΩ (typ. ) 74mΩ (typ. ) 99mΩ (typ. )
Symbol
MTP1406L3
Outline
SOT-223 D
S G：Gate D：Drain S：Source D G
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain C.
Full PDF Text Transcription for MTP1406L3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTP1406L3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C733L3 Issued Date : 2012.02.14 Revised Date : 2012.03.09 Page No. : 1/8 MTP1406L3 Features ...
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012.02.14 Revised Date : 2012.03.09 Page No. : 1/8 MTP1406L3 Features • Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-4A RDSON@VGS=-10V, ID=-1.5A RDSON@VGS=-4.5V, ID=-2A -60V -4.8A 75mΩ (typ.) 74mΩ (typ.) 99mΩ (typ.) Symbol MTP1406L3 Outline SOT-223 D S G：Gate D：Drain S：Source D G Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Linear Derating Factor Opera
MTP1406L3 Datasheet
