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MTP2071M3 - 20V P-CHANNEL Enhancement Mode MOSFET

Key Features

  • Single Drive Requirement.
  • Ultra High Speed Switching.
  • Pb-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.2A RDSON@VGS=-2.5V, ID=-2A RDSON@VGS=-1.8V, ID=-1A -20V -5A 52mΩ (typ. ) 66mΩ (typ. ) 80mΩ (typ. ) Symbol MTP2071M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total.

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Datasheet Details

Part number MTP2071M3
Manufacturer CYStech Electronics
File Size 332.58 KB
Description 20V P-CHANNEL Enhancement Mode MOSFET
Datasheet download datasheet MTP2071M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C417M3 Issued Date : 2012.02.17 Revised Date : 2013.08.12 Page No. : 1/8 MTP2071M3 Features • Single Drive Requirement • Ultra High Speed Switching • Pb-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.2A RDSON@VGS=-2.5V, ID=-2A RDSON@VGS=-1.8V, ID=-1A -20V -5A 52mΩ (typ.) 66mΩ (typ.) 80mΩ (typ.) Symbol MTP2071M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Note : *1.