High density cell design for ultra low on resistance.
Excellent thermal and electrical capabilities.
Compact and low profile TSOT-23 package.
Pb-free lead plating and halogen-free package
BVDSS ID RDSON(MAX)@VGS=-4.5V, ID=-2.8A RDSON(MAX)@VGS=-2.5V, ID=-2A
-20V -3.4A 79mΩ(typ. ) 116mΩ(typ. )
Equivalent Circuit
MTP2301V3
Outline
TSOT-23 D
G G：Gate S：Source D：Drain
S
Absolute Maximum Ratings (Ta=25°C)
Parameter.
Full PDF Text Transcription for MTP2301V3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTP2301V3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. -20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C322V3 Issued Date : 2012.07.18 Revised Date : Page No. : 1/9 MTP2301V3 Features • Advanced t...
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12.07.18 Revised Date : Page No. : 1/9 MTP2301V3 Features • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile TSOT-23 package • Pb-free lead plating and halogen-free package BVDSS ID RDSON(MAX)@VGS=-4.5V, ID=-2.8A RDSON(MAX)@VGS=-2.5V, ID=-2A -20V -3.4A 79mΩ(typ.) 116mΩ(typ.) Equivalent Circuit MTP2301V3 Outline TSOT-23 D G G：Gate S：Source D：Drain S Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25°C, VGS=-4.5V Continuous Drain Current @TA=70°C
MTP2301V3 Datasheet
