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MTP2311V8 - P-Channel Enhancement Mode MOSFET

General Description

The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTP2311V8 Outline DFN3×3 Pin 1 G:Gate S:Source D:Drain Ordering Information Device MTP2311V8-0-T1-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel MTP2311V8 CYStek Product Specification http://www. Datasheet4U. com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Pa.

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Datasheet Details

Part number MTP2311V8
Manufacturer CYStech Electronics
File Size 371.56 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTP2311V8 Datasheet

Full PDF Text Transcription for MTP2311V8 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTP2311V8. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. P-Channel Enhancement Mode MOSFET Spec. No. : C733V8 Issued Date : 2013.06.24 Revised Date : Page No. : 1/9 MTP2311V8 Description BVDSS ID RDSON...

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.24 Revised Date : Page No. : 1/9 MTP2311V8 Description BVDSS ID RDSON@VGS=10V, ID=-3A RDSON@VGS=-4.5V, ID=-2A -60V -11A 63mΩ(typ) 78mΩ(typ) The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.