MTP2317N3 Description
CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. 2012.04.12 Revised Date.
MTP2317N3 Key Features
- Advanced trench process technology
- High density cell design for ultra low on resistance
- Excellent thermal and electrical capabilities
- pact and low profile SOT-23 package
- Pb-free lead plating and halogen-free package
- 20V -5.8A 28mΩ(typ.) 35mΩ(typ.) 51mΩ(typ.)