Full PDF Text Transcription for MTP2317N3 (Reference)
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MTP2317N3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. 20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C566N3 Issued Date : 2012.04.12 Revised Date : 2014.01.14 Page No. : 1/9 MTP2317N3 Features • ...
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2.04.12 Revised Date : 2014.01.14 Page No. : 1/9 MTP2317N3 Features • Advanced trench process technology • High density cell design for ultra low on resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package • Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.5A RDSON@VGS=-2.5V, ID=-2.5A RDSON@VGS=-1.8V, ID=-2A -20V -5.8A 28mΩ(typ.) 35mΩ(typ.) 51mΩ(typ.
MTP2317N3 Datasheet
