MTP2317N3 - 20V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics

Datasheet Details

Part number	MTP2317N3
Manufacturer	CYStech Electronics
File Size	362.17 KB
Description	20V P-CHANNEL Enhancement Mode MOSFET
Datasheet	MTP2317N3-CYStechElectronics.pdf

Advanced trench process technology.
High density cell design for ultra low on resistance.
Excellent thermal and electrical capabilities.
Compact and low profile SOT-23 package.
Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-4.5A RDSON@VGS=-2.5V, ID=-2.5A RDSON@VGS=-1.8V, ID=-2A -20V -5.8A 28mΩ(typ. ) 35mΩ(typ. ) 51mΩ(typ. ) Equivalent Circuit MTP2317N3 Outline SOT-23 D G G：Gate S：Source D：Drain S Ordering Information.

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Published: May 25, 2014 |