MTP2611V8 P-Channel Enhancement Mode MOSFET

CYStech Electronics

Description

CYStech Electronics Corp.P-Channel Enhancement Mode MOSFET Spec.No.: C913V8 Issued Date : 2013.07.08 Revised Date : 2013.10.30 Page No.: 1/9 MTP.

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Datasheet Specifications

Part number: MTP2611V8
Manufacturer: CYStech Electronics
File Size: 366.13 KB
Datasheet: MTP2611V8-CYStechElectronics.pdf
Description: P-Channel Enhancement Mode MOSFET

Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package BVDSS ID RDSON@VGS=-4.5V, ID=-15.3A RDSON@VGS=-2.5V, ID=-13.1A -20V -45A 8.8mΩ(typ) 12.8mΩ(typ) Equivalent Circuit MTP2611V8 Outline DFN3×3 Pin 1

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP2611V8 CYStek Product Specification

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MTP2611V8 P-Channel Enhancement Mode MOSFET CYStech Electronics

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