Pb-free package
BVDSS ID RDSON@VGS=-10V, ID=-100mA RDSON@VGS=-5V, ID=-100mA
-50V -130mA 4.5Ω(typ) 6Ω(typ)
Equivalent Circuit
MTP3J15N3
Outline
SOT-23 D
G：Gate S：Source D：Drain
G
S
Absolute Maximum Ratings (Tj=25°C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-5V Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TA=25℃ T.
Full PDF Text Transcription for MTP3J15N3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTP3J15N3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. 50V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C465N3 Issued Date : 2009.03.03 Revised Date : 2012.05.18 Page No. : 1/ 8 MTP3J15N3 Features •...
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9.03.03 Revised Date : 2012.05.18 Page No. : 1/ 8 MTP3J15N3 Features • Low gate charge • Excellent thermal and electrical capabilities • Pb-free package BVDSS ID RDSON@VGS=-10V, ID=-100mA RDSON@VGS=-5V, ID=-100mA -50V -130mA 4.5Ω(typ) 6Ω(typ) Equivalent Circuit MTP3J15N3 Outline SOT-23 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-5V Pulsed Drain Current (Note 1) Maximum Power Dissipation @ TA=25℃ Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purpose, 10 s O
MTP3J15N3 Datasheet
