Pb-free package lead plating and halogen-free package. BVDSS ID RDSON(typ)
-30V -230mA 3Ω@-4V 4.6Ω@-2.5V 10.9Ω@-1.5V
Equivalent Circuit
MTP3LP01Y3
Outline
SOT-723 D
G：Gate S：Source D：Drain
G
S
Absolute Maximum Ratings (Ta=25°C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation (Note 2) Th.
Full PDF Text Transcription for MTP3LP01Y3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTP3LP01Y3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET Spec. No. : 794Y3 Issued Date : 2011.12.22 Revised Date : Page No. : 1/ 8 MTP3LP01Y3 Features • Ultra high...
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.12.22 Revised Date : Page No. : 1/ 8 MTP3LP01Y3 Features • Ultra high speed switching. • Low gate charge. • 2.5V drive. • Pb-free package lead plating and halogen-free package. BVDSS ID RDSON(typ) -30V -230mA 3Ω@-4V 4.6Ω@-2.5V 10.9Ω@-1.5V Equivalent Circuit MTP3LP01Y3 Outline SOT-723 D G：Gate S：Source D：Drain G S Absolute Maximum Ratings (Ta=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation (Note 2) Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Note : 1. Pulse width≤ 10μs, du
MTP3LP01Y3 Datasheet
