Datasheet Details
| Part number | MTP425I3 |
|---|---|
| Manufacturer | CYStech Electronics |
| File Size | 322.92 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 MTP425I3 Datasheet
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Key Features
- Single Drive Requirement.
- Low On-resistance.
- Fast switching Characteristic.
- Pb-free lead plating package BVDSS ID RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-7A -30V -50A 10mΩ(typ) 14mΩ(typ) Symbol MTP425I3 Outline TO-251AB TO-251S G：Gate D：Drain S：Source G D S G D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C Continuous Drain Current @VGS=-10.