MTP452L3 - P-Channel Enhancement Mode Power MOSFET
CYStech Electronics
Key Features
Simple Drive Requirement.
Low On-resistance.
Fast switching Characteristic.
Pb-free lead plating package
BVDSS RDSON(MAX) ID
-30V 55mΩ -6A
Symbol
MTP452L3
Outline
SOT-223 D
S G：Gate D：Drain S：Source D G
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Linear Derating Factor O.
Full PDF Text Transcription for MTP452L3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTP452L3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C400L3 Issued Date : 2009.06.22 Revised Date : Page No. : 1/7 MTP452L3 Features • Simple Dri...
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009.06.22 Revised Date : Page No. : 1/7 MTP452L3 Features • Simple Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating package BVDSS RDSON(MAX) ID -30V 55mΩ -6A Symbol MTP452L3 Outline SOT-223 D S G：Gate D：Drain S：Source D G Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-ambient, max Note : *1.
MTP452L3 Datasheet
