Pb-free package
Symbol
MTP452M3
Outline
SOT-89
G：Gate S：Source D：Drain
G D D S
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃.
Full PDF Text Transcription for MTP452M3 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTP452M3. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C426M3 Issued Date : 2012.02.07 Revised Date : Page No. : 1/8 MTP452M3 Features • Single Drive...
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2.02.07 Revised Date : Page No. : 1/8 MTP452M3 Features • Single Drive Requirement • Low On-resistance, RDS(ON)=50mΩ(typ.)@VGS=-10V, ID=-3.2A RDS(ON)=72mΩ(typ.)@VGS=-4.5V, ID=-2.6A • Ultra High Speed Switching • Pb-free package Symbol MTP452M3 Outline SOT-89 G：Gate S：Source D：Drain G D D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=70℃) Operating Junction and Storage Temperature Note : *1.
MTP452M3 Datasheet
