MTS2072G6 Datasheet | CYStech Electronics

CYStech Electronics Corp. Spec. No. : C879G6 Issued Date : 2012.10.09 Revised Date : Page No. : 1/13 Dual N-Channel Enhancement Mode MOSFET MTS2072G6 BVDSS Tr1(N-CH) 60V ID 0.53A(VGS=10V) RDSON(TYP.) 1.2Ω(VGS=10V) 1.6Ω(VGS=4.5V) Tr2(N-CH) 30V 5.6A(VGS=10 V) 16.6mΩ(VGS=10V) 24.7mΩ(VGS=4.5V) Description The MTS2072G6 consists of two different N-channel enhancement-mode MOSFETs in a single TSOP-6 package, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all mercial-industrial surface mount applications. Features - Simple drive requirement - Low gate charge - Low on-resistance - Fast switching speed - Pb-free lead plating and halogen-free package Equivalent Circuit Outline TSOP-6 S2 G2 D1 G：Gate S：Source D：Drain Pin 1 D2 S1 G1 CYStek Product Specification CYStech Electronics Corp. Spec. No. :...