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NESG3032M14 Datasheet NPN SILICON GERMANIUM RF TRANSISTOR

Manufacturer: California Eastern Labs

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Datasheet Details

Part number NESG3032M14
Manufacturer California Eastern Labs
File Size 323.67 KB
Description NPN SILICON GERMANIUM RF TRANSISTOR
Download NESG3032M14 Download (PDF)

Overview

NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208.

Key Features

  • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz.
  • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz.
  • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz.
  • 4-pin lead-less minimold (M14, 1208 package).

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