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California Eastern Labs
California Eastern Labs

NESG3032M14 Datasheet Preview

NESG3032M14 Datasheet

NPN SILICON GERMANIUM RF TRANSISTOR

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NESG3032M14 pdf
NPN SILICON GERMANIUM RF TRANSISTOR
NESG3032M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• 4-pin lead-less minimold (M14, 1208 package)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG3032M14 NESG3032M14-A
NESG3032M14-T3 NESG3032M14-T3-A
4-pin lead-less minimold
(M14, 1208 package)
(Pb-Free)
50 pcs
(Non reel)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
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Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
12.0
4.3
1.5
35
150
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Unit
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10575EJ01V0DS (1st edition)
Date Published July 2005 CP(K)
© NEC Compound Semiconductor Devices, Ltd. 2005



California Eastern Labs
California Eastern Labs

NESG3032M14 Datasheet Preview

NESG3032M14 Datasheet

NPN SILICON GERMANIUM RF TRANSISTOR

No Preview Available !

NESG3032M14 pdf
NESG3032M14
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current
DC Current Gain
IEBO VEB = 1 V, IC = 0 mA
hFE Note 1 VCE = 2 V, IC = 6 mA
RF Characteristics
Insertion Power Gain
Noise Figure
Associated Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
S21e2 VCE = 2 V, IC = 15 mA, f = 2.0 GHz
NF VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
Ga VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
Cre Note 2 VCB = 2 V, IE = 0 mA, f = 1 MHz
MSGNote VCE = 2 V, IC = 15 mA, f = 2.0 GHz
3
Gain 1 dB Compression Output Power
3rd Order Intermodulation Distortion
Output Intercept Point
PO (1 dB)
OIP3
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
S21
3. MSG = S12
hFE CLASSIFICATION
Rank
Marking
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hFE Value
FB
zN
220 to 380
MIN. TYP. MAX. Unit
− − 100 nA
− − 100 nA
220 300 380
15.0 17.5
0.60 0.85
17.5
0.15 0.25
17.5 20.5
dB
dB
dB
pF
dB
12.5 dBm
24.0 dBm
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] [Device Parameters]
URL http://www.ncsd.necel.com/
2 Data Sheet PU10575EJ01V0DS


Part Number NESG3032M14
Description NPN SILICON GERMANIUM RF TRANSISTOR
Maker California Eastern Labs
Total Page 6 Pages
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