NESG3032M14 Datasheet - California Eastern Labs

NPN SILICON GERMANIUM RF TRANSISTOR

NESG3032M14 Features

* The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz

* Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz

* SiGe HBT technology (UHS3) adopted: fmax = 110 GHz

* 4-pi

NESG3032M14 General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.

NESG3032M14 Datasheet (323.67 KB)

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NESG3032M14

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California Eastern Labs

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323.67 KB

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Npn silicon germanium rf transistor.
NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PAC.

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NESG3032M14 NPN SILICON GERMANIUM TRANSISTOR California Eastern Labs

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NESG3032M14 Features

NESG3032M14 General Description

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