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NR6300EZ Datasheet 30um Ingaas Avalanche Photo Diode

Manufacturer: California Eastern Labs

Overview: PHOTO DIODE NR6300EZ  30  m InGaAs AVALANCHE PHOTO DIODE FOR OTDR.

Datasheet Details

Part number NR6300EZ
Manufacturer California Eastern Labs
File Size 246.56 KB
Description 30um InGaAs AVALANCHE PHOTO DIODE
Datasheet NR6300EZ-CaliforniaEasternLabs.pdf

General Description

The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems.

Key Features

  • Small dark current.
  • Small terminal capacitance.
  • High sensitivity.
  • High speed response.
  • Detecting area size ID = 5 nA Ct = 0.35 pF @ 0.9 V(BR)R S = 0.94 A/W @.
  • = 1 310 nm, M = 1 fC = 2.5 GHz MIN. @.
  • = 1 310 nm, M = 10  30 m Document No. PL10701EJ02V0DS (2nd edition) Date Published January 2010 NS The mark.
  • shows major revised points. The revised points can be easily searched by copying an ".
  • " in the PDF file and specifying it i.

More Datasheets from California Eastern Labs

Part Number Description
NR6800 80um InGaAs AVALANCHE PHOTO DIODE

NR6300EZ Distributor