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1N4109 - SILICON ZENER DIODE

Download the 1N4109 datasheet PDF. This datasheet also covers the 1N4099 variant, as both devices belong to the same silicon zener diode family and are provided as variant models within a single manufacturer datasheet.

Description

The CENTRAL SEMICONDUCTOR 1N4099 series silicon Zener diode is designed for low leakage, low current, and low noise applications.

MARKING: Devices shall either be marked with the prefix ‘C’ followed by the full part number or by the marking code in the Electrical Characteristics Table.

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Note: The manufacturer provides a single datasheet file (1N4099-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Central Semiconductor

Part Number Description
1N4100 SILICON ZENER DIODE
1N4101 SILICON ZENER DIODE
1N4102 SILICON ZENER DIODE
1N4103 SILICON ZENER DIODE
1N4104 SILICON ZENER DIODE

Full PDF Text Transcription

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1N4099 THRU 1N4135 SILICON ZENER DIODE LOW NOISE 6.8 VOLT THRU 100 VOLT 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4099 series silicon Zener diode is designed for low leakage, low current, and low noise applications. MARKING: Devices shall either be marked with the prefix ‘C’ followed by the full part number or by the marking code in the Electrical Characteristics Table. DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 250 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.
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