2N3494 - PNP TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR 2N3494 and 2N3495 are silicon PNP transistors designed for general purpose amplifier and switching applications.

Central Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	2N3494
Manufacturer	Central Semiconductor
File Size	146.11 KB
Description	PNP TRANSISTORS
Datasheet	2N3494 Datasheet
Additional preview pages of the 2N3494 datasheet.

📁 Similar Datasheet

2N3494 - GENERAL PURPOSE TRANSISTOR (Motorola)
2N3490 - NPN Transistor (Microsemi)
2N3491 - NPN Transistor (SSDI)
2N3492 - NPN Transistor (Microsemi)
2N3495 - GENERAL PURPOSE TRANSISTOR (Motorola)
2N3496 - GENERAL PURPOSE TRANSISTOR (Motorola)
2N3496 - PNP SILICON PLANAR SWITCHING TRANSISTORS (CDIL)
2N3497 - GENERAL PURPOSE TRANSISTOR (Motorola)
2N3497 - PNP SILICON PLANAR SWITCHING TRANSISTORS (CDIL)
2N3498 - NPN SILICON PLANAR RF TRANSISTORS (CDIL)

Other Datasheets by Central Semiconductor

2N3495 - PNP TRANSISTORS
2N3496 - Small Signal Transistors
2N3497 - Small Signal Transistors
2N3414 - NPN SILICON TRANSISTOR
2N3415 - NPN SILICON TRANSISTOR
2N3416 - NPN Transistor
2N3417 - NPN SILICON TRANSISTOR
2N3419 - NPN TRANSISTORS

Full PDF Text Transcription

Click to expand full text

2N3494 2N3495 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3494 and 2N3495 are silicon PNP transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg 2N3494 80 2N3495 120 80 120 4.5 100 0.6 3.0 -65 to +200 UNITS V V V mA W W °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3494 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V (2N3494) - 100 ICBO VCB=90V (2N3495) -- IEBO VEB=3.

Published: May 9, 2017 |