2N5060 THRU 2N5064
SILICON CONTROLLED RECTIFIERS
0.8 AMP, 30 THRU 200 VOLT
w w w. c e n t r a l s e m i . c o m
The CENTRAL SEMICONDUCTOR 2N5060 series
devices are epoxy molded SCRs designed for control
systems and sensing circuit applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 2N5060 2N5061 2N5062 2N5063 2N5064 UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM 30
60 100 150 200 V
RMS On-State Current (Note 1; TC=80°C)
IT(RMS)
0.8
A
Average On-State Current (Note 1; TC=67°C) IT(AV)
0.51 A
Average On-State Current (Note 1; TC=102°C) IT(AV)
0.255
A
Peak One Cycle Surge Current (60Hz)
ITSM
10 A
I2t Value for Fusing (t=8.3ms)
I2t
0.4 A2s
Peak Forward Gate Power (tp<1.0μs)
PGM
0.1
Average Forward Gate Power (t=8.3ms)
PG(AV)
0.01
Peak Forward Gate Current (tp<1.0μs)
IGM
1.0
Peak Reverse Gate Voltage (tp<1.0μs)
VRGM
5.0
Operating Junction Temperature
TJ
-40 to +125
Storage Temperature
Tstg -40 to +150
Thermal Resistance (Note 2)
ΘJC
75
Thermal Resistance
ΘJA 200
Notes: 1) 180° Conduction Angles
2) Measured with the “flat side down” on a heatsink and held in position by a metal clamp over the curved surface.
W
W
A
V
°C
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ
10 μA
IDRM, IRRM VD=Rated VDRM, RGK=1.0kΩ, TC=110°C
50 μA
IGT VD=7.0V, RL=100Ω
200 μA
IGT VD=7.0V, RL=100Ω, TC=-40°C
350 μA
IH Initiating Current, IT=20mA, RGK=1.0kΩ
5.0 mA
IH Initiating Current, IT=20mA, RGK=1.0kΩ, TC=-40°C
10 mA
VGT
VD=7.0V, RL=100Ω
0.8 V
VGT
VD=7.0V, RL=100Ω, TC=-40°C
1.2 V
VGD
VD=Rated VDRM, RL=100Ω, TC=110°C
0.1
V
VTM
ITM=1.2A, TA=25°C
1.7 V
dv/dt
VD=Rated VDRM, RGK=1.0kΩ
30 V/μs
R5 (7-May 2015)
