Datasheet4U Logo Datasheet4U.com

2N5115 Datasheet SILICON P-CHANNEL JFETS

Manufacturer: Central Semiconductor

Download the 2N5115 datasheet PDF. This datasheet also includes the 2N5114 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5114-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

: The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications.

MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGD VGS IG PD TJ, Tstg 30 30 50 500 -65 to +200 UNITS V V mA mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5114 2N5115 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 500 - 500 IGSS VGS=20V, TA=150°C - 1.0 - 1.0 IDSS VDS=18V 30 90 -- IDSS VDS=15V -- 15 60 ID(OFF) VDS=15V, VGS=12V - 500 -- ID(OFF) VDS=15V, VGS=7.0V -- - 500 ID(OFF) VDS=15V, VGS=5.0V -- -- ID(OFF) VDS=15V, VGS=12V, TA=150°C - 1.0 -- ID(OFF) VDS=15V, VGS=7.0V, TA=150°C - - - 1.0 ID(OFF) VDS=15V, VGS=5.0V, TA=150°C - - -- BVGSS IG=1.0μA 30 - 30 - VGS(OFF) VDS=15V, ID=1.0nA 5.0 10 3.0 6.0 VGS(f) IG=1.0mA - 1.0 - 1.0 VDS(ON) ID=15mA - 1.3 -- VDS(ON) ID=7.0mA -- - 0.8 VDS(ON) ID=3.0mA -- -- rDS(ON) ID=1.0mA, VGS=0 - 75 - 100 rds(ON) VGS=0, ID=0, f=1.0kHz - 75 - 100 Ciss VDS=15V, VGS=0, f=1.0MHz - 25 - 25 Crss VGS=12V, VDS=0, f=1.0MHz - 7.0 -- Crss VGS=7.0V, VDS=0, f=1.0MHz -- - 7.0 Crss VGS=5.0V, VDS=0, f=1.0MHz -- -- 2N5116 MIN MAX - 500 - 1.0 -5.0 25 --- 500 --- 1.0 30 1.0 4.0 - 1.0 --- 0.6 - 150 - 150 - 25 --- 7.0 UNITS pA μA mA mA pA pA pA μA μA μA V V V V V V Ω Ω pF pF pF pF R1 (4-March 2014) 2N5114 2N5115 2N5116 SILICON P-CHANNEL JFETS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N5114 2N5115 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ton VDD=10V, VGS=12V, ID=15mA, RL=580Ω - 16 -- ton VDD=6.0V, VGS=7.0V, ID=7.0mA, RL=743Ω - - - 30 ton VDD=6.0V, VGS=5.0V, ID=3.0mA, RL=1.8kΩ - - -- toff VDD=10V, VGS=12V, ID=15mA, RL=580Ω - 21 -- toff VDD=6.0V, VG

Overview

2N5114 2N5115 2N5116 SILICON P-CHANNEL JFETS w w w.

c e n t r a l s e m i .

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Solitron Devices Logo 2N5115 P-CHANNEL JFETS Solitron Devices
VPT Logo 2N5115 P-Channel J-FET VPT
Micross Logo 2N5115 P-CHANNEL JFET Micross
Microsemi Logo 2N5115 P-Channel J-FET Microsemi
InterFET Logo 2N5115 P-Channel JFET InterFET

More Datasheets from Central Semiconductor

Part Number Description
2N5114 SILICON P-CHANNEL JFETS
2N5116 SILICON P-CHANNEL JFETS
2N5109 NPN RF TRANSISTOR
2N5172 COMPLEMENTARY SILICON TRANSISTORS
2N5189 NPN SILICON POWER TRANSISTOR
2N5190R NPN SILICON POWER TRANSISTOR
2N5191R NPN SILICON POWER TRANSISTOR
2N5192R NPN SILICON POWER TRANSISTOR
2N5193 PNP SILICON POWER TRANSISTORS
2N5194 PNP SILICON POWER TRANSISTORS