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Central Semiconductor

2N5202 Datasheet Preview

2N5202 Datasheet

NPN Transistor

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2N5202
SILICON
NPN POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5202 is a silicon
NPN power transistor mounted in a hermetically sealed
metal case, designed for general purpose amplifier and
switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
100
75
50
6.0
4.0
5.0
2.0
35
-65 to +200
5.0
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=100V, VEB=1.5V
ICEV
VCE=100V, VEB=1.5V, TC=150°C
IEBO
VEB=6.0V
BVCEO
IC=200mA
50
BVCER
IC=200mA, RBE=50Ω
75
VCE(SAT) IC=4.0A, IB=400mA
VBE(SAT) IC=4.0A, IB=400mA
hFE
VCE=1.2V, IC=4.0A
10
|hfe|
VCE=10V, IC=500mA
6.0
Cob
VCB=10V, f=1.0MHz
Is/b
VCE=40V, tp=1.0s
400
Es/b
VBB=4.0V, RBE=50Ω, L=50μH
0.4
td
VCC=30V, IC=4.0A, IB1=IB2=0.8A
tr
VCC=30V, IC=4.0A, IB1=IB2=0.8A
ts
VCC=30V, IC=4.0A, IB1=IB2=0.8A
tf
VCC=30V, IC=4.0A, IB1=IB2=0.8A
MAX
10
10
10
1.2
2.0
100
175
40
400
1200
400
UNITS
V
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
V
V
V
V
pF
mA
mJ
ns
ns
ns
ns
R0 (15-January 2019)




Central Semiconductor

2N5202 Datasheet Preview

2N5202 Datasheet

NPN Transistor

No Preview Available !

2N5202
SILICON
NPN POWER TRANSISTOR
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R0 (15-January 2019)



Part Number 2N5202
Description NPN Transistor
Maker Central Semiconductor
Total Page 3 Pages
PDF Download

2N5202 Datasheet PDF





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