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2N6027 - SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio ().

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Datasheet Details

Part number 2N6027
Manufacturer Central Semiconductor
File Size 258.82 KB
Description SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
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2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (). TO-92 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Gate-Cathode Forward Voltage Gate-Cathode Reverse Voltage Gate-Anode Reverse Voltage Anode-Cathode Voltage Peak Non-Repetitive Forward Current (t=10μs) Peak Repetitive Forward Current (t=20μs, D.C.=1.0%) Peak Repetitive Forward Current (t=100μs, D.C.=1.
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