2N6027
2N6027 is SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS manufactured by Central Semiconductor.
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio ().
TO-92 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) Gate-Cathode Forward Voltage Gate-Cathode Reverse Voltage Gate-Anode Reverse Voltage Anode-Cathode Voltage Peak Non-Repetitive Forward Current (t=10μs) Peak Repetitive Forward Current (t=20μs, D.C.=1.0%) Peak Repetitive Forward Current (t=100μs, D.C.=1.0%) DC Forward Anode Current DC Gate Current Power Dissipation Operating Junction Temperature Storage Temperature
SYMBOL VGKF VGKR VGAR VAK ITSM ITRM ITRM IT IG PD TJ Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N6027
SYMBOL TEST CONDITIONS
MIN MAX
IGAO
VS=40V
- 10
IGKS
VS=40V
- 50
IP VS=10V, RG=1.0M
- 2.0
IP VS=10V, RG=10k
- 5.0
IV VS=10V, RG=1.0M
- 50
IV VS=10V, RG=10k
- IV VS=10V, RG=200
- VT VS=10V, RG=1.0M
0.2 1.6
VT VS=10V, RG=10k
0.2 0.6
VF IF=50m A
- 1.5
VO VB=20V, CC=0.2μF
- tr VB=20V, CC=0.2μF
- 80
40 5.0 40 40 5.0 2.0 1.0 150 50 300 -50 to +100 -55 to +150
2N6028 MIN MAX
- 10
- 50
-...
