2N6312
DESCRIPTION
: The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are plementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
2N4231A 2N4232A 2N4233A
SYMBOL 2N6312 2N6313 2N6314
VCBO
VCEO
VEBO
IC 5.0
ICM 10
IB 2.0
PD 75
TJ, Tstg
-65 to +200
JC
UNITS V V V A A A W °C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
ICBO
VCB=Rated VCBO
ICEO
VCE=30V (2N4231A, 2N6312)
ICEO
VCE=50V (2N4232A, 2N6313)
ICEO
VCE=70V (2N4233A, 2N6314)
ICEV
VCE=Rated VCEO,...
