BC546,A,B
BC547,A,B,C
BC548,A,B,C
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC546, BC547,
BC548 series devices are silicon NPN small signal
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-92-18R CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
IBM
IEM
PD
TJ, Tstg
ΘJA
ΘJC
BC546
80
80
65
6.0
BC547
50
50
45
6.0
100
200
200
200
500
-65 to +150
250
150
BC548
30
30
30
5.0
UNITS
V
V
V
V
mA
mA
mA
mA
mW
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
ICBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
VBE(ON)
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hfe
fT
Cob
Cib
NF
VCB=30V
VCB=30V, TA=150°C
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
VCE=5.0V, IC=2.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=10μA (BC546,A, BC547,A, BC548,A)
VCE=5.0V, IC=10μA (BC546B, BC547B, BC548B)
VCE=5.0V, IC=10μA (BC547C, BC548C)
VCE=5.0V, IC=2.0mA (BC546)
VCE=5.0V, IC=2.0mA (BC546A, BC547A, BC548A)
VCE=5.0V, IC=2.0mA (BC546B, BC547B, BC548B)
VCE=5.0V, IC=2.0mA (BC547, BC548)
VCE=5.0V, IC=2.0mA (BC547C, BC548C)
VCE=5.0V, IC=2.0mA, f=1.0kHz
VCE=5.0V, IC=10mA, f=35MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=0.2mA, RG=2.0kΩ,
B=200Hz, f=1.0kHz
580
110
110
200
110
420
125
TYP MAX UNITS
15 nA
5.0 μA
250 mV
600 mV
700 mV
900 mV
700 mV
770 mV
90
150
270
450
220
450
800
800
900
300 MHz
2.5 pF
9.0 pF
2.0 10
dB
R1 (13-December 2013)
