Datasheet Details
| Part number | BCW65B |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 300.71 KB |
| Description | SILICON NPN TRANSISTORS |
| Download | BCW65B Download (PDF) |
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Overview: BCW65 SERIES BCW66 SERIES SURFACE MOUNT SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i .
Download the BCW65B datasheet PDF. This datasheet also includes the BCW65 variant, as both parts are published together in a single manufacturer document.
| Part number | BCW65B |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 300.71 KB |
| Description | SILICON NPN TRANSISTORS |
| Download | BCW65B Download (PDF) |
|
|
|
: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD TJ, Tstg ΘJA BCW65 BCW66 60 75 32 45 5.0 800 1.0 100 200 350 -65 to +150 357 UNITS V V V mA A mA mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=Rated VCEO ICBO VCB= Rated VCEO, TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=500mA, IB=50mA fT VCE=5.0V, IC=50mA, f=20MHz 170 Cc VCB=10V, IE=0, f=1.0MHz 8.0 Ce VEB=0.5V, IC=0, f=1.0MHz 50 MAX 20 20 20 0.3 0.7 1.25 2.0 UNITS nA μA nA V V V V V V V V V MHz pF pF hFE VCE=10V, IC=100μA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=100mA hFE VCE=2.0V, IC=500mA BCW65A BCW66F MIN MAX 35 - 75 - 100 250 35 - BCW65B BCW66G MIN MAX 50 - 110 - 160 400 60 - BCW65C BCW66H MIN MAX 80 - 180 - 250 630 100 - R4 (21-October 2021) BCW65 SERIES BCW66 SERIES SURFACE MOUNT SILICON NPN TRANSISTORS SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector DEVICE BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H MARKING CODE EA EB EC EF EG EH SYMBOL A B C D E F G H I J DIMENSIONS
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BCW65B | NPN Silicon AF Transistors | Siemens Semiconductor Group |
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BCW65B | NPN Silicon AF Transistor | Infineon Technologies AG |
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BCW65B | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor |
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BCW65B | NPN General Purpose Amplifier | Galaxy Electrical |
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BCW65B | GENERAL PURPOSE TRANSISTOR | Motorola |
| Part Number | Description |
|---|---|
| BCW65 | SILICON NPN TRANSISTORS |
| BCW65A | SILICON NPN TRANSISTORS |
| BCW65C | SILICON NPN TRANSISTORS |
| BCW61B | SURFACE MOUNT SILICON PNP TRANSISTORS |
| BCW61C | SURFACE MOUNT SILICON PNP TRANSISTORS |
| BCW61D | SURFACE MOUNT SILICON PNP TRANSISTORS |
| BCW66 | SILICON NPN TRANSISTORS |
| BCW66F | SILICON NPN TRANSISTORS |
| BCW66G | SILICON NPN TRANSISTORS |
| BCW66H | SILICON NPN TRANSISTORS |