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BCY78-VIII Datasheet SILICON PNP TRANSISTORS

Manufacturer: Central Semiconductor

Download the BCY78-VIII datasheet PDF. This datasheet also includes the BCY78 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (BCY78-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

: The CENTRAL SEMICONDUCTOR BCY78 and BCY79 series types are silicon PNP epitaxial planar transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.

MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD PD TJ, Tstg JA JC BCY78 32 BCY79 45 32 45 5.0 100 200 200 340 1.0 -65 to +200 450 150 UNITS V V V mA mA mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICBO VCB=Rated VCBO, TA=150°C IEBO VEB=5.0V BVCBO IC=10μA (BCY78) 32 BVCBO IC=10μA (BCY79) 45 BVCEO IC=2.0mA (BCY78) 32 BVCEO IC=2.0mA (BCY79) 45 BVEBO IE=1.0μA 5.0 VCE(SAT) IC=10mA, IB=250μA VCE(SAT) IC=100mA, IB=2.5mA VBE(SAT) IC=10mA, IB=250μA 0.60 VBE(SAT) IC=100mA, IB=2.5mA 0.70 VBE(ON) VCE=5.0V, IC=2.0mA 0.60 MAX 15 10 20 0.25 0.80 0.85 1.20 0.75 BCY78-VII BCY78-VIII BCY78-IX BCY79-VII BCY79-VIII BCY79-IX MIN TYP MAX MIN MAX MIN MAX hFE VCE=5.0V, IC=10μA - 140 - 30 - 40 - hFE VCE=5.0V, IC=2.0mA 120 - 220 180 310 250 460 hFE VCE=1.0V, IC=10mA 80 - - 120 400 160 630 hFE VCE=1.0V, IC=100mA 40 - - 45 - 60 - UNITS nA μA nA V V V V V V V V V V BCY78-X BCY79-X MIN MAX 100 380 630 240 1000 60 - R4 (4-June 2013) BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN fT VCE=5.0V, IC=10mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC

Overview

BCY78, VII, VIII, IX, X BCY79, VII, VIII, IX, X SILICON PNP TRANSISTORS w w w.

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