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BU208 Datasheet PDF

Central Semiconductor BU208

The CENTRAL SEMICONDUCTOR BU208, BU208A types are high voltage NPN silicon power transistors, manufactured by the multiepitaxial mesa process, designed for fast switching horizontal deflection circuits in color televisions.
Part No. BU208
Datasheet BU208 Download
Manufacturer
Central Semiconductor
Description HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
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BU208 datasheet page 1 preview

DESCRIPTION

: MARKING: FULL PART NUMBER TO-3 CASE

MAXIMUM RATINGS

: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg JC 1500 700 10 8.0 15 150 -65 to +175 1.0

ELECTRICAL CHARACTERISTICS

: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICES VCE=1500V IEBO VEB=5.0V BVCEO IC=100mA 700 BVEBO IE=10mA 10 VCE(SAT) IC=4.5A, IB=2.0A (BU208) VCE(SAT) IC=4.5A, IB=2.0A (BU208A) VBE(SAT) IC=4.5A, IB=2.0A fT VCE=5.0V, IC=100mA, f=5.0MHz 7.0 ts
BU208 page 2 preview