CEDM7001 Datasheet | Central Semiconductor

SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET SOT-883L CASE APPLICATIONS: - Load/Power switches - DC - DC converters - Battery powered portable equipment w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an N-Channel Enhancement-mode silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low r DS(ON) and low theshold voltage. MARKING CODE: H PLEMENTARY P-CHANNEL: CEDM8001 Features : - 100m W Power Dissipation - 0.4mm low package profile - Low r DS(ON) - Low threshold voltage - Logic level patible - Small leadless surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Peak Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature SYMBOL VDS VGS ID IDM PD TJ, Tstg 20 10 100 200 100 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=10V, VDS=0 IDSS VDS=20V,...