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CJD210 - PNP POWER TRANSISTOR

Download the CJD210 datasheet PDF. This datasheet also covers the CJD200 variant, as both devices belong to the same pnp power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR CJD200 and CJD210 are complementary silicon power transistors manufactured in a surface mount package designed for high current amplifier applications.

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Note: The manufacturer provides a single datasheet file (CJD200-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CJD200 NPN CJD210 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD200 and CJD210 are complementary silicon power transistors manufactured in a surface mount package designed for high current amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 8.0 V Continuous Collector Current IC 5.0 A Peak Collector Current ICM 10 A Continuous Base Current IB 1.0 A Power Dissipation PD 12.5 W Power Dissipation (TA=25°C) PD 1.