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CM5943 Datasheet NPN HIGH FREQUENCY SILICON TRANSISTOR

Manufacturer: Central Semiconductor

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General Description

The CENTRAL SEMICONDUCTOR CM5943 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching applications.

This device is a replacement for the 2N5943.

MAXIMUM RATINGS (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 40 30 3.5 400 1.0 3.5 -65 to +200 175 50 UNITS V V V mA W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICBO ICEO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE fT fT fT Ccb Ceb hfe rb’Cc NF NF Gpe Gpe TEST CONDITIONS VCB=15V VCE=20V IC=100µA IC=5.0mA IE=100µA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=15V, IC=50mA VCE=15V, IC=25mA, f=200MHz VCE=15V, IC=50mA, f=200MHz VCE=15V, IC=100mA, f=200MHz VCB=30V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz VCE=15V, IC=50mA, f=1.0kHz VCB=15V, IE=50mA, f=31.8MHz VCE=15V, IC=30mA, f=200MHz (Figure 1) VCE=15V, IC=35mA, f=200MHz (Figure 2) VCE=15V, IC=10mA, f=200MHz (Figure 1) VCE=15V, IC=50mA, f=250MHz (Figure 2) MIN TYP 40 30 3.5 25 1000 1200 1000 1.0 25 2.0 7.0 3.4 11.4 MAX 10 50 0.2 1.0 300 2400 2.5 15 350 20 8.0 UNITS µA µA V V V V V MHz MHz MHz pF pF ps dB dB dB dB (SEE REVERSE SIDE) R0 (1 – October 2001) CM5943 HIGH FREQUENCY TRANSISTOR 50 Ohms INPUT Vc C9 L4 C10 C3 L2 C11 C13 C14 C1 C12 C2 L1 C4 C5 L3 C6 C1: 470 pF C7 C8 C2: 3.0 - 35 pF C3, C12: 1.0 - 10 pF C4, C11: 500 pF C5, C7, C9, C13: 0.1 µF VE C6, C8, C10, C14: 0.001 µF L1: 2 turns #20 wire, 1/4" ID, 3/16" long L2: 5 turns #18 wire, 1/4" ID, 5/8" long, tapped 1-3/4 turns from collector L3, L4: 0.47 µH Figure 1.

Overview

CM5943 NPN SILICON HIGH FREQUENCY TRANSISTOR JEDEC TO-39 CASE.

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