CMDSH-4E Datasheet | Central Semiconductor

CMDSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-323 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-4E is an enhanced version of the CMDSH-3 silicon Schottky diode in an SOD-323 surface mount package. ENHANCED SPECIFICATIONS: - IO from 100 m A MAX to 200 m A MAX - BVR from 30V MIN to 40 V MIN - VF from 1.0 V MAX to 0.8 V MAX MARKING CODE: S1E MAXIMUM RATINGS: (TA=25°C) - Peak Repetitive Reverse Voltage - Average Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VRRM IO IFRM IFSM PD TJ, Tstg ΘJA 40 200 350 750 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR VR=25V IR VR=25V, TA=100°C - BVR IR=100μA 40 50 VF IF=2.0m...