CMLDM3757 Description
The CENTRAL SEMICONDUCTOR CMLDM3757 consists of plementary silicon N-Channel and P-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. 3C7 SOT-563 CASE APPLICATIONS:.
CMLDM3757 Key Features
- ESD protection up to 1800V (Human Body Model)
- 350mW power dissipation
- Very low rDS(ON)
- Low threshold voltage
- Logic level patible
- Small, SOT-563 surface mount package
- 65 to +150
- 0.35 0.55
- 0.5 0.7
- 0.7 0.9