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Central Semiconductor

CMLM0205 Datasheet Preview

CMLM0205 Datasheet

Multi Discrete Module

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CMLM0205
Multi Discrete Module
SURFACE MOUNT SILICON
N-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
SOT-563 CASE
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0205 is a
Multi Discrete Module™ consisting of a single
N-Channel MOSFET and a low VF Schottky diode
packaged in a space saving SOT-563 case. This
device is designed for small signal general purpose
applications where size and operational efficiency are
prime requirements.
• Combination: N-Channel MOSFET and
Low VF Schottky Diode.
MARKING CODE: C25
SYMBOL
PD
TJ, Tstg
ΘJA
350
-65 to +150
357
UNITS
mW
°C
°C/W
MAXIMUM RATINGS - Q1: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
60
60
40
280
280
1.5
1.5
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp1.0ms
Peak Forward Surge Current, tp = 8.0ms
SYMBOL
VRRM
IF
IFRM
IFSM
40
500
3.5
10
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IGSSF, IGSSR
IDSS
IDSS
ID(ON)
BVDSS
VGS(th)
VDS(ON)
VDS(ON)
VSD
rDS(ON)
rDS(ON)
VGS=20V, VDS=0
VDS=60V, VGS=0
VDS=60V, VGS=0, TJ=125°C
VGS=10V, VDS=10V
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=0, IS=400mA
VGS=10V, ID=500mA
VGS=10V, ID=500mA, TJ=125°C
500
60
1.0
100
1.0
500
2.5
1.0
0.15
1.2
2.0
3.5
UNITS
V
V
V
mA
mA
A
A
UNITS
V
mA
A
A
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
R3 (15-June 2015)




Central Semiconductor

CMLM0205 Datasheet Preview

CMLM0205 Datasheet

Multi Discrete Module

No Preview Available !

CMLM0205
Multi Discrete Module
SURFACE MOUNT SILICON
N-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
ton / toff
TEST CONDITIONS
VGS=5.0V, ID=50mA
VGS=5.0V, ID=50mA, TJ=125°C
VDS=10V, ID=200mA
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDD=30V, VGS=10V, ID=200mA
RG=25Ω, RL=150Ω
MIN
80
ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)
IR VR=10V
IR VR=30V
BVR
IR=500μA
VF IF=100μA
VF IF=1.0mA
VF IF=10mA
VF IF=100mA
VF IF=500mA
CJ VR=1.0V, f=1.0MHz
40
MAX
3.0
5.0
5.0
50
25
20
20
100
0.13
0.21
0.27
0.35
0.47
50
SOT-563 CASE - MECHANICAL OUTLINE
UNITS
Ω
Ω
mS
pF
pF
pF
ns
μA
μA
V
V
V
V
V
V
pF
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Drain Q1
MARKING CODE: C25
R3 (15-June 2015)


Part Number CMLM0205
Description Multi Discrete Module
Maker Central Semiconductor
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