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Central Semiconductor

CMLM0305G Datasheet Preview

CMLM0305G Datasheet

Multi Discrete Module

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CMLM0305
CMLM0305G*
Multi Discrete Module
SURFACE MOUNT SILICON
N-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
SOT-563 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0305 and
CMLM0305G are Multi Discrete Modules™ consisting
of a single N-Channel enhancement-mode MOSFET
and a low VF Schottky diode packaged in a space
saving SOT-563 surface mount case. This device is
designed for small signal general purpose applications
where size and operational efficiency are prime
requirements.
MARKING CODES: CMLM0305: 5C3
CMLM0305G*: 5CG
* Device is Halogen Free by design
APPLICATIONS:
• DC / DC Converters
• Battery Powered Portable Equipment
FEATURES:
• ESD protection up to 2kV
• Low rDS(on) Transistor (3Ω MAX @ VGS=1.8V)
• Low VF Schottky Diode (0.47V MAX @ 0.5A)
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
PD
PD
PD
TJ, Tstg
ΘJA
350
300
150
-65 to +150
357
UNITS
mW
mW
mW
°C
°C/W
MAXIMUM RATINGS - Q1: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
SYMBOL
VDS
VDG
VGS
ID
IDM
50
50
12
280
1.5
UNITS
V
V
V
mA
A
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp1.0ms
Peak Forward Surge Current, tp = 8.0ms
SYMBOL
VRRM
IF
IFRM
IFSM
40
500
3.5
10
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IGSSF, IGSSR VGS=5.0V
IGSSF, IGSSR VGS=10V
IGSSF, IGSSR VGS=12V
IDSS
VDS=50V, VGS=0
BVDSS
VGS=0, ID=10μA
50
VGS(th)
VDS=VGS, ID=250μA
0.49
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
100
2.0
2.0
50
1.0
UNITS
nA
μA
μA
nA
V
V
R5 (15-June 2015)




Central Semiconductor

CMLM0305G Datasheet Preview

CMLM0305G Datasheet

Multi Discrete Module

No Preview Available !

CMLM0305
CMLM0305G*
Multi Discrete Module
SURFACE MOUNT SILICON
N-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL
TEST CONDITIONS
MIN TYP MAX
VSD
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
VGS=0, IS=115mA
VGS=1.8V, ID=50mA
VGS=2.5V, ID=50mA
VGS=5.0V, ID=50mA
VDS=10V, ID=200mA
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
200
1.6
1.3
1.1
1.4
3.0
2.5
2.0
5.0
50
Coss
VDS=25V, VGS=0, f=1.0MHz
25
ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)
IR VR=10V
IR VR=30V
BVR
IR=500μA
VF IF=100μA
VF IF=1.0mA
VF IF=10mA
VF IF=100mA
VF IF=500mA
CJ VR=1.0V, f=1.0MHz
40
20
100
0.13
0.21
0.27
0.35
0.47
50
SOT-563 CASE - MECHANICAL OUTLINE
UNITS
V
Ω
Ω
Ω
mS
pF
pF
pF
μA
μA
V
V
V
V
V
V
pF
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Drain Q1
MARKING CODES:
CMLM0305: 5C3
CMLM0305G*: 5CG
* Device is Halogen Free by design
R5 (15-June 2015)


Part Number CMLM0305G
Description Multi Discrete Module
Maker Central Semiconductor
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