CMPT3906G Overview
Description
These CENTRAL SEMICONDUCTOR devices are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. SOT-23 CASE * Device is Halogen Free by design MARKING CODES: CMPT3904: C1A CMPT3906: C2A CMPT3904G*: CG1 CMPT3906G*: CG2 SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CMPT3904 CMPT3906 CMPT3904G* CMPT3906G* 60 40 40 40 6.0 5.0 200 350 -65 to +150 357 UNITS V V V mA mW °C °C/W SYMBOL TEST CONDITIONS ICEV VCE=30V, VEB=3.0V IBL VCE=30V, VEB=3.0V BVCBO IC=10µA BVCEO IC=1.0mA BVEBO IE=10µA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA hFE VCE=1.0V, IC=0.1mA hFE VCE=1.0V, IC=1.0mA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=50mA hFE VCE=1.0V, IC=100mA CMPT3904 CMPT3904G* MIN MAX - 50 - 50 60 40 6.0 - 0.20 - 0.30 0.65 0.85 - 0.95 40 70 100 300 60 30 - CMPT3906 CMPT3906G* MIN MAX - 50 - 50 40 40 5.0 - 0.25 - 0.40 0.65 0.85 - 0.95 60 80 100 300 60 30 - UNITS nA nA V V V V V V V R10 (25-March 2020) CMPT3904 CMPT3904G* NPN CMPT3906 CMPT3906G* PNP SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS CMPT3904 - Continued: (TA=25°C) CMPT3904G* SYMBOL TEST CONDITIONS MIN MAX fT VCE=20V, IC=10mA, f=100MHz 300 - Cob VCB=5.0V, IE=0, f=1.0MHz - 4.0 Cib VBE=0.5V, IC=0, f=1.0MHz - 12 td VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA - 35 tr VCC=3.0V, VBE=0.5, IC=10mA, IB1=1.0mA - 35 ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA - 200 tf VCC=3.0V, I.
