CMRDM3590 Key Features
- Power dissipation: 125mW
- Low package profile: 0.5mm (MAX)
- Low rDS(ON)
- Low threshold voltage
- Logic level patible
- Small SOT-963 surface mount package
- Part: CMRDM3590
- Manufacturer: Central Semiconductor (official site)
- Size: 701.11 KB
Related Central Semiconductor Datasheets
| Part Number | Description |
|---|---|
| CMRDM3575 | SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS |
| CMRDM7590 | SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CMR1-005M | SURFACE MOUNT SILICON GENERAL PURPOSE RECTIFIERS |
| CMR1-01M | SURFACE MOUNT SILICON GENERAL PURPOSE RECTIFIERS |
| CMR1-02 | SILICON GENERAL PURPOSE RECTIFIERS |
CMRDM3590 Description
The CENTRAL SEMICONDUCTOR CMRDM3590 is an enhancement-mode dual N-Channel MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. CR SOT-963 CASE Device is Halogen Free by design APPLICATIONS:.