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CMUDM8001 Datasheet Surface Mount N-channel Enhancement-mode Silicon MOSFET

Manufacturer: Central Semiconductor

Overview: CMUDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR CMUDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers Low rDS(on) and Low Theshold Voltage.

MARKING CODE: C8A SOT-523 CASE APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature

Key Features

  • Power Dissipation 250mW Low rDS(on) Low Threshold Voltage Logic Level Compatible Small, SOT-523 Surface Mount Package Complementary Device: CMUDM7001 UNITS V V mA mA mW °C SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150.

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