Datasheet Details
| Part number | CMUT4401 |
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| Manufacturer | Central Semiconductor |
| File Size | 114.94 KB |
| Description | SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
| Datasheet | CMUT4401-CentralSemiconductor.pdf |
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Overview: CMUT4401 NPN CMUT4403 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-523 CASE w w w. c e n t r a l s e m i .
| Part number | CMUT4401 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 114.94 KB |
| Description | SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
| Datasheet | CMUT4401-CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR CMUT4401 and CMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount package, designed for small signal general purpose amplifier and switching applications.
MARKING CODE: CMUT4401: PC1 CMUT4403: FC2 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICEV VCE=35V, VEB=0.4V IBEV VCE=35V, VEB=0.4V BVCBO IC=100μA BVCEO IC=1.0mA BVEBO IE=100μA VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA hFE VCE=1.0V, IC=0.1mA hFE VCE=1.0V, IC=1.0mA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=150mA hFE VCE=2.0V, IC=150mA hFE VCE=2.0V, IC=500mA fT VCE=10V, IC=20mA, f=100MHz Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CMUT4401 CMUT4403 60 40 40 40 6.0 5.0 600 250 -65 to +150 500 CMUT4401 MIN MAX - 0.1 - 0.1 60 40 6.0 - 0.40 - 0.75 0.75 0.95 - 1.2 20 40 80 100 300 -40 250 - 6.5 - 30 CMUT4403 MIN MAX - 0.1 - 0.1 40 40 5.0 - 0.40 - 0.75 0.75 0.95 - 1.3 30 60 100 -100 300 20 200 - 8.5 - 30 UNITS V V V mA mW °C °C/W UNITS μA μA V V V V V V V MHz pF pF R1 (9-February 2010) CMUT4401 NPN CMUT4403 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL TEST CONDITIONS hie VCE=10V, IC=1.0mA, f=1.0kHz hre VCE=10V, IC=1.0mA, f=1.0kHz hfe VCE=10V, IC=1.0mA, f=1.0kHz hoe VCE=10V, IC=1.0mA, f=1.0kHz td VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA tr VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA ts VCC=30V, IC=150mA, IB1=IB2=15mA tf VCC=30V, IC=150mA, IB1=IB2=15mA CMUT4
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