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CP591. For precise diagrams, and layout, please refer to the original PDF.
PROCESS Small Signal Transistor PNP - Amp/Switch Transistor Chip www.DataSheet4U.com CP591 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness B...
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M Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 30,600 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A BACKSIDE COLLECTOR EPITAXIAL PLANAR 19 x 19 MILS 9.0 MILS 3.5 x 4.3 MILS 3.5 x 4.5 MILS Al - 30,000Å Au - 18,000Å 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (1-August 2002) Central www.DataSheet4U.com TM PROCESS CP591 Semiconductor Corp.
CP591 Datasheet
