CPS041
PROCESS
Silicon Controlled Rectifier
Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
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GLASS PASSIVATED MESA 41 x 41 MILS 8.7 MILS ± 0.6 MILS 18 x 8 MILS 7.1 x 7.1 MILS Al
- 45,000Å Au
- 10,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 6,474 PRINCIPAL DEVICE TYPES CS18D BRX49 CS92D CS89M
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 .centralsemi.
R1 (19 -May 2005)
PROCESS
Typical Electrical Characteristics
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145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 .centralsemi.
R1 (19 -May...
