CSLLDM22011-225F Datasheet - Central Semiconductor

N-CHANNEL MOSFET

CSLLDM22011-225F Features

* High voltage capability

* Low gate charge (Qgs = 4.45nC TYP)

* Ultra low rDS(ON) (0.3Ω TYP)

* TID = 10kRad MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 225 V Gate-Source Voltage VGS 30 V Continuous Drain Curren

CSLLDM22011-225F General Description

The CENTRAL SEMICONDUCTOR CSLLDM22011-225F is an N-Channel MOSFET designed for high voltage, fast switching, low earth orbit applications This radiation hardened MOSFET combines high voltage capability with ultra low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency. TO-22.

CSLLDM22011-225F Datasheet (888.44 KB)