CSLLDM22011-225F mosfet equivalent, n-channel mosfet.
* High voltage capability
* Low gate charge (Qgs = 4.45nC TYP)
* Ultra low rDS(ON) (0.3Ω TYP)
* TID = 10kRad
MAXIMUM RATINGS: (TC=25°C unless otherwise .
This radiation hardened MOSFET combines high voltage capability with ultra low rDS(ON), low threshold voltage, and low g.
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