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CTLM7110-M832D Datasheet Preview

CTLM7110-M832D Datasheet

Multi Discrete Module

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CTLM7110-M832D
MULTI DISCRETE MODULE
SURFACE MOUNT N-CHANNEL
ENHANCEMENT-MODE SILICON MOSFET
AND
LOW VF SILICON SCHOTTKY RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLM7110-M832D
consists of an N-Channel Enhancement-mode MOSFET
and a Low VF Schottky Rectifier. Packaged in a small,
thermally efficient, leadless 3x2mm surface mount
case, it is designed for applications where small size,
operational efficiency, and low energy consumption are
the prime requirements.
TLM832D CASE
• Device is Halogen Free by design
APPLICATIONS
• Load Power Switches
• DC - DC Converters
• LCD Backlighting
• Battery powered portable devices
including Cell Phones, Digital Cameras,
Pagers, PDAs, Notebook PCs, etc.
MARKING CODE: CFL
FEATURES
Dual Chip Device
High Current (1.0A) MOSFET and Schottky Rectifier
Low rDS(ON): 0.25Ω MAX @ VGS=1.5V
Low VF Schottky Rectifier (550mV @ 1.0A MAX)
ESD Protection up to 2KV
Small TLM 3x2mm Leadless Surface Mount Package
Complementary Device: CTLM8110-M832D
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
PD
TJ, Tstg
ΘJA
1.65
-65 to +150
76
MAXIMUM RATINGS - Q1: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
VDS
VGS
ID
IDM
20
8.0
1.0
4.0
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp<1.0ms
Peak Forward Surge Current, tp=8.0ms
VRRM
IF
IFRM
IFSM
40
1.0
3.5
10
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
MAX
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
Qg(tot)
Qgs
Qgd
gFS
VGS=8.0V, VDS=0
VDS=20V, VGS=0
VGS=0, ID=250μA
VDS=10V, ID=1.0mA
VGS=0, IS=1.0A
VGS=4.5V, ID=0.5A
VGS=2.5V, ID=0.5A
VGS=1.5V, ID=0.1A
VDS=10V, VGS=4.5V, ID=1.0A
VDS=10V, VGS=4.5V, ID=1.0A
VDS=10V, VGS=4.5V, ID=1.0A
VDS=10V, ID=0.5A
20
0.5
0.075
0.10
0.17
2.4
0.25
0.65
4.2
10
10
1.2
1.1
0.10
0.14
0.25
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm2.
UNITS
W
°C
°C/W
V
V
A
A
V
A
A
A
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
nC
nC
nC
S
R2 (2-August 2011)




Central Semiconductor

CTLM7110-M832D Datasheet Preview

CTLM7110-M832D Datasheet

Multi Discrete Module

No Preview Available !

CTLM7110-M832D
MULTI DISCRETE MODULE
SURFACE MOUNT N-CHANNEL
ENHANCEMENT-MODE SILICON MOSFET
AND
LOW VF SILICON SCHOTTKY RECTIFIER
ELECTRICAL CHARACTERISTICS - Q1 - Continued: (TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
Crss
Ciss
Coss
ton
toff
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDD=10V, VGS=5.0V, ID=0.5A
VDD=10V, VGS=5.0V, ID=0.5A
ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
IR
IR
IR
BVR
VF
VF
VF
VF
CJ
VR=5.0V
VR=8.0V
VR=15V
IR=100μA
IF=10mA
IF=100mA
IF=500mA
IF=1.0A
VR=4.0V, f=1.0MHz
40
TYP
45
220
120
25
140
TYP
50
MAX
MAX
10
20
50
0.29
0.36
0.45
0.55
UNITS
pF
pF
pF
ns
ns
UNITS
μA
μA
μA
V
V
V
V
V
pF
TLM832D CASE - MECHANICAL OUTLINE
SUGGESTED MOUNTING PADS
For Maximum Power Dissipation
(Dimensions in mm)
* Note:
- Exposed pad P1 common to pins 7 and 8
- Exposed pad P2 common to pins 5 and 6
w w w. c e n t r a l s e m i . c o m
PIN CONFIGURATION
For standard mounting refer
to TLM832D Package Details
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Anode D1
4) Anode D1
5) Cathode D1
6) Cathode D1
7) Drain Q1
8) Drain Q1
MARKING CODE: CFL
R2 (2-August 2011)


Part Number CTLM7110-M832D
Description Multi Discrete Module
Maker Central Semiconductor
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