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MCR708A Datasheet SURFACE MOUNT SILICON CONTROLLED RECTIFIERS

Manufacturer: Central Semiconductor

Download the MCR708A datasheet PDF. This datasheet also includes the MCR703A variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MCR703A-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

: The CENTRAL SEMICONDUCTOR MCR703A, MCR704A, MCR706A, and MCR708A are epoxy molded SCRs designed for sensing circuit and control system applications.

MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL MCR703A MCR704A MCR706A MCR708A UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 100 200 400 600 V RMS On-State Current (TC=85°C) IT(RMS) 4.0 A Peak non-Repetitive Surge Current (1/2 cycle Sine wave, 50Hz/60Hz) ITSM 15 A I2t Value for Fusing, t=10ms I2t 1.1 A2s Peak Gate Power, tp=1.0μs Average Gate Power Dissipation Peak Gate Current, tp=1.0μs Critical Rate of Rise of On-State Current PGM PG (AV) IGM di/dt 0.5 W 0.1 W 0.2 A 50 A/μs Storage Temperature Junction Temperature Tstg TJ -40 to +150 -40 to +125 °C °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ 10 μA IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C 200 μA IGT VD=12V, RL=10Ω 38 75 μA IH IT=50mA, RGK=1.0KΩ 0.25 2.0 mA VGT VD=12V, RL=10Ω 0.55 0.8 V VTM ITM=8.0A, tp=380μs 1.6 1.8 V dv/dt VD=2/3 VDRM, RGK=1.0KΩ, TC=125°C 10 V/μs R2 (21-January 2013) MCR703A MCR704A MCR706A MCR708A SURFACE MOUNT SILICON CONTROLLED RECTIFIERS 4.0 AMP, 100 THRU 600 VOLT DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Anode 3) Cathode 4) Anode MARKING: FULL PART NUMBER w w w.

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Overview

MCR703A MCR704A MCR706A MCR708A SURFACE MOUNT SILICON CONTROLLED RECTIFIERS 4.0 AMP, 100 THRU 600 VOLT w w w.

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