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MD3250 Datasheet DUAL PNP SILICON TRANSISTOR

Manufacturer: Central Semiconductor

General Description

: The CENTRAL SEMICONDUCTOR MD3250 and MD3251 Series types are dual PNP silicon transistors, manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case, designed for differential amplifier applications.

TO-78 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Die) Power Dissipation (One Die), TC=25°C Power Dissipation (Both Die), TC=25°C Operating and Storage Junction Temperature SYMBOL VCEO VCBO VEBO IC PD PD PD PD TJ, Tstg ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=40V ICBO VCB=40V, TA=150°C IEBO VBE=3.0V BVCEO IC=10mA 40 BVCBO IC=10μA 50 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=1.0mA VC

Overview

MD3250 MD3250A MD3251 MD3251A DUAL PNP SILICON TRANSISTOR CentralTM Semiconductor Corp.