Datasheet4U Logo Datasheet4U.com

MJ4032 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR MJ4032, MJ4035 types are Complementary Silicon Power Darlington Transistors designed for general purpose and amplifier applications.

📥 Download Datasheet

Datasheet preview – MJ4032

Datasheet Details

Part number MJ4032
Manufacturer Central Semiconductor
File Size 145.23 KB
Description COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Datasheet download datasheet MJ4032 Datasheet
Additional preview pages of the MJ4032 datasheet.

📁 Similar Datasheet

  • MJ4032 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (ST Microelectronics)
  • MJ4032 - Power Transistors (Mospec)
  • MJ4032 - (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS (Comset Semiconductors)
  • MJ4032 - Silicon PNP Darlingtion Power Transistor (Inchange Semiconductor)
  • MJ4032 - Bipolar NPN Device (Seme LAB)
  • MJ4032 - Power Transistor (Motorola)
  • MJ4030 - Power Transistors (Mospec)
  • MJ4030 - Silicon PNP Darlingtion Power Transistor (Inchange Semiconductor)
  • MJ4030 - (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS (Comset Semiconductors)
  • MJ4030 - Power Transistor (Motorola)
Other Datasheets by Central Semiconductor
  • MJ4035 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Full PDF Text Transcription

Click to expand full text
MJ4032 PNP MJ4035 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJ4032, MJ4035 types are Complementary Silicon Power Darlington Transistors designed for general purpose and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current IB Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC 100 100 5.0 16 0.5 150 -65 to +200 1.17 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICER VCE=100V, RBE=1.0kΩ ICER VCE=100V, RBE=1.
Published: |