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MJE13004 Datasheet NPN SILICON POWER TRANSISTOR

Manufacturer: Central Semiconductor

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General Description

The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications.

MAXIMUM RATINGS (TC=25°C unless otherwise noted) SYMBOL MJE13004 Collector-Emitter Voltage VCEO 300 Collector-Emitter Voltage VCEV 600 Emitter-Base Voltage VEBO Collector Current IC Peak Collector Current ICM Base Current IB Peak Base Current IBM Power Dissipation (TA=25°C) PD Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC MJE13005 400 700 9.0 4.0 8.0 2.0 4.0 2.0 75 -65 to +150 62.5 1.67 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX ICEV ICEV ICEV ICEV IEBO BVCEO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE VCE=600V, VBE(OFF)=1.5V (MJE13004) VCE=600V, VBE(OFF)=1.5V, TC=100°C (MJE13004) VCE=700V, VBE(OFF)=1.5V (MJE13005) VCE=700V, VBE(OFF)=1.5V, TC=100°C (MJE13005) VEB=9.0V IC=10mA (MJE13004) IC=10mA (MJE13005) IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=4.0A, IB=1.0A IC=2.0A, IB=0.5A, TC=100°C IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=2.0A, IB=0.5A, TC=100°C VCE=5.0V, IC=1.0A VCE=5.0V, IC=2.0A 300 400 10 8.0 1.0 5.0 1.0 5.0 1.0 0.5 0.6 1.0 1.0 1.2 1.6 1.5 60 40 UNITS V V V A A A A W W °C °C/W °C/W UNITS mA mA mA mA mA V V V V V V V V V (SEE REVERSE SIDE) R0 MJE13004 / MJE13005 ELECTRICAL CHARACTERISTICS (CONTINUED) SYMBOL fT Cob TEST CONDITIONS VCE=10V, IC=500mA, f=1.0MHz VCB=10V, IE=0, f=1.0kHz td VCC=125V, IC=2.0A, IB1= IB2=0.4A tr tP=25µs, Duty Cycle ≤ 1.0% ts tf tsv IC=2.0A, Vclamp=300V, IB1=0.4A, tc VBE(off)=5.0V, TC=100°C tfi NPN POWER TRANSISTOR MIN TYP MAX 4.0 65 UNITS MHz pF 0.1 µs 0.7 µs 4.0 µs 0.9 µs 4.0 0.9 0.15 µs µs µs TO-220 PACKAGE - MECHANICAL OUTLINE A B C D E F H I G 123 J L K SYMBOL A B C D E F (DIA) G H I J K L M DIMENSIONS

Overview

DATA SHEET MJE13004 MJE13005 NPN SILICON POWER TRANSISTOR JEDEC TO-220.

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