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MPQ7093 Datasheet SILICON HIGH VOLTAGE QUAD PNP TRANSISTOR

Manufacturer: Central Semiconductor

Overview: MPQ7093 SILICON HIGH VOLTAGE QUAD PNP TRANSISTOR w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR MPQ7093 is comprised of four independent PNP silicon transistors mounted in a 14-pin DIP, designed for high voltage amplifier applications.

MARKING: FULL PART NUMBER TO-116 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (per transistor) Power Dissipation (total package) Power Dissipation (TC=25°C) (total package) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg 250 250 5.0 500 750 1700 3.0 -65 to +150 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=180V IEBO VEB=3.0V BVCBO IC=100μA 250 BVCEO IC=1.0mA 250 BVEBO IE=100μA 5.0 VCE(SAT) IC=20mA, IB=2.0mA VBE(SAT) IC=20mA, IB=2.0mA hFE VCE=10V, IC=1.0mA 25 hFE VCE=10V, IC=10mA 35 hFE VCE=10V, IC=30mA 25