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MPSA26 - SILICON NPN DARLINGTON TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain.

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Datasheet Details

Part number MPSA26
Manufacturer Central Semiconductor
File Size 335.57 KB
Description SILICON NPN DARLINGTON TRANSISTORS
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MPSA26 MPSA27 SILICON NPN DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=40V ICBO VCB=50V ICES VCE=40V ICES VCE=50V IEBO VEB=10V BVCBO IC=100μA BVCES IC=100μA VCE(SAT) IC=100mA, IB=100μA VBE(ON) VCE=5.0V, IC=100mA hFE VCE=5.0V, IC=10mA hFE VCE=5.
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