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MPSA26 MPSA27
SILICON NPN DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=40V
ICBO
VCB=50V
ICES
VCE=40V
ICES
VCE=50V
IEBO
VEB=10V
BVCBO
IC=100μA
BVCES
IC=100μA
VCE(SAT) IC=100mA, IB=100μA
VBE(ON)
VCE=5.0V, IC=100mA
hFE VCE=5.0V, IC=10mA
hFE VCE=5.