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MPSH11 - NPN RF TRANSISTORS

This page provides the datasheet information for the MPSH11, a member of the MPSH10 NPN RF TRANSISTORS family.

Description

The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator applications.

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Datasheet Details

Part number MPSH11
Manufacturer Central Semiconductor
File Size 128.96 KB
Description NPN RF TRANSISTORS
Datasheet download datasheet MPSH11 Datasheet
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Full PDF Text Transcription

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MPSH10 MPSH11 SILICON NPN RF TRANSISTORS TO-92 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO PD TJ, Tstg ΘJA 30 25 3.0 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=25V IEBO VEB=2.0V BVCBO IC=100μA 30 BVCEO IC=1.0mA 25 BVEBO IE=10μA 3.0 VCE(SAT) IC=4.0mA, IB=0.
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