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Central Semiconductor Corp

2N7002 Datasheet Preview

2N7002 Datasheet

N-channel MOSFET

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2N7002
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002 type is an
N-Channel enhancement-mode MOSFET manufactured
by the N-Channel DMOS Process, designed for high
speed pulsed amplifier and driver applications.
MARKING CODE: 702
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
ID
IS
IDM
ISM
PD
TJ, Tstg
ΘJA
60
60
40
115
75
115
800
800
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF
IGSSR
IDSS
IDSS
ID(ON)
BVDSS
VGS(th)
VDS(ON)
VDS(ON)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
VGS=20V
VGS=20V
VDS=60V, VGS=0
VDS=60V, VGS=0, TA=125°C
VDS=10V, VGS=10V
ID=10μA
VDS=VGS, ID=250μA
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=0, IS=11.5mA
VGS=10V, ID=500mA
VGS=10V, ID=500mA, TA=100°C
VGS=5.0V, ID=50mA
VGS=5.0V, ID=50mA, TA=100°C
VDS=10V, ID=200mA
500
60
1.0
80
105
2.1
3.7
6.2
MAX
100
100
1.0
500
2.5
3.75
0.375
1.5
7.5
13.5
7.5
13.5
UNITS
V
V
V
mA
mA
mA
mA
mA
mW
°C
°C/W
UNITS
nA
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
Ω
Ω
mS
R6 (9-February 2015)




Central Semiconductor Corp

2N7002 Datasheet Preview

2N7002 Datasheet

N-channel MOSFET

No Preview Available !

2N7002
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP MAX
Crss
VDS=25V, VGS=0, f=1.0MHz
5.0
Ciss VDS=25V, VGS=0, f=1.0MHz
50
Coss
VDS=25V, VGS=0, f=1.0MHz
25
Qg(tot)
VDS=30V, VGS=4.5V, ID=100mA
0.592
Qgs VDS=30V, VGS=4.5V, ID=100mA
0.196
Qgd VDS=30V, VGS=4.5V, ID=100mA
0.148
ton VDD=30V, ID=200mA, RG=25Ω, RL=150Ω
20
toff VDD=30V, ID=200mA, RG=25Ω, RL=150Ω
20
SOT-23 CASE - MECHANICAL OUTLINE
UNITS
pF
pF
pF
nC
nC
nC
ns
ns
21
3
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 702
w w w. c e n t r a l s e m i . c o m
R6 (9-February 2015)


Part Number 2N7002
Description N-channel MOSFET
Maker Central Semiconductor Corp
PDF Download

2N7002 Datasheet PDF






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