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Central Semiconductor Corp

CMPD2003C Datasheet Preview

CMPD2003C Datasheet

SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE

No Preview Available !

CMPD2003
CMPD2003A
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004A
CMPD2004C
CMPD2004S
SURFACE MOUNT
HIGH VOLTAGE
SILICON SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD2003,
CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004,
CMPD2004A, CMPD2004C and CMPD2004S types
are silicon switching diodes manufactured by the
epitaxial planar process, designed for applications
requiring high voltage capability.
SOT-23 CASE
The following configurations are available:
CMPD2003
SINGLE
CMPD2003A DUAL, COMMON ANODE
CMPD2003C DUAL, COMMON CATHODE
CMPD2003S DUAL, IN SERIES
CMPD2004
SINGLE
CMPD2004A DUAL, COMMON ANODE
CMPD2004C DUAL, COMMON CATHODE
CMPD2004S DUAL, IN SERIES
MARKING CODE: A82
MARKING CODE: 8A2
MARKING CODE: C3C
MARKING CODE: C3S
MARKING CODE: D53
MARKING CODE: DB8
MARKING CODE: DB7
MARKING CODE: DB6
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Average Forward Current
Continous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
ΘJA
CMPD2003
CMPD2004
CMPD2003A CMPD2004A
CMPD2003C CMPD2004C
CMPD2003S CMPD2004S
200 240
250 300
200 200
250 225
625
4.0
1.0
350
-65 to +150
357
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
R9 (25-January 2010)




Central Semiconductor Corp

CMPD2003C Datasheet Preview

CMPD2003C Datasheet

SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE

No Preview Available !

CMPD2003
CMPD2003A
CMPD2003C
CMPD2003S
CMPD2004
CMPD2004A
CMPD2004C
CMPD2004S
SURFACE MOUNT
HIGH VOLTAGE
SILICON SWITCHING DIODE
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
CMPD2003
CMPD2004
CMPD2003A
CMPD2004A
CMPD2003C
CMPD2004C
CMPD2003S
CMPD2004S
SYMBOL TEST CONDITIONS
MIN MAX
MIN MAX
IR
IR
IR
IR
BVR
VF
VF
CT
trr
VR=200V
VR=200V, TA=150°C
VR=240V
VR=240V, TA=150°C
IR=100μA
IF=100mA
IF=200mA
VR=0, f=1.0MHz
IR=IF=30mA, RL=100Ω, Rec. to 3.0mA
- 100
- 100
--
--
250 -
- 1.0
- 1.25
- 5.0
- 50
--
--
- 100
- 100
300 -
- 1.0
--
- 5.0
- 50
SOT-23 CASE - MECHANICAL OUTLINE
UNITS
nA
μA
nA
μA
V
V
V
pF
ns
PIN CONFIGURATIONS
CMPD2003
CMPD2004
LEAD CODE:
1) Anode
2) No Connection
3) Cathode
CMPD2003A
CMPD2004A
LEAD CODE:
1) Cathode D2
2) Cathode D1
3) Anode D1, D2
CMPD2003C
CMPD2004C
LEAD CODE:
1) Anode D2
2) Anode D1
3) Cathode D1, D2
MARKING CODE: SEE PREVIOUS PAGE
w w w. c e n t r a l s e m i . c o m
CMPD2003S
CMPD2004S
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
R9 (25-January 2010)


Part Number CMPD2003C
Description SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE
Maker Central Semiconductor Corp
Total Page 3 Pages
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